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参数资料
| 型号： | MBM150GR12A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 文件页数： | 3/4页 |
| 文件大小： | 126K |
| 代理商： | MBM150GR12A |
1.5
1
0.5
0
050
100
150
200
TYPICAL
Switching
Time
,t
(
s)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc
=600V
VGE
=±15V
RG
=8.2
TC
=25°C
Inductive Load
Vcc
=600V
VGE
=±15V
IC
=150A
TC
=25°C
Inductive Load
30
20
25
15
5
10
0
150
100
50
200
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
10
1
0.1
0.01
1
10
100
Switching
Time
,t
(
s)
Gate Resistance, RG (
)
Switching time vs. Gate resistance
ton
toff
TYPICAL
100
10
1
0.1
1
10
100
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Gate Resistance. RG (
)
Switching loss vs. Gate resistance
Err
Eton
Etoff
10000
1000
100
10
1
0
200
400
600
800
1000
1200
1400
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W
)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE
=±15V
RG
=8.2
TC
≤125°C
PDE-M150GR12A-0
tf
tr
tf
Vcc
=600V
VGE
=±15V
RG
=8.2
TC
=125°C
Inductive Load
Vcc
=600V
VGE
=±15V
IC
=150A
TC
=125°C
Inductive Load
相关PDF资料 |
PDF描述 |
|---|---|
| MBM150GR12A | 150 A, 1200 V, N-CHANNEL IGBT |
| MBM150GS12EBW | IGBT |
| MBM150GS6AW | 150 A, 600 V, N-CHANNEL IGBT |
| MBM200GR12A | 200 A, 1200 V, N-CHANNEL IGBT |
| MBM200GR12A | 200 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM20000 | 制造商:Red Lion Controls 功能描述:MOUNTING BRACKET, BOTTOM MOUNT KIT 制造商:Red Lion Controls 功能描述:BOTTOM MOUNT BRACKET KIT |
| MBM200A6 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES |
| MBM200GR6 | 制造商:n/a 功能描述:IGBT Module |
| MBM-2105G | 制造商: 功能描述: 制造商:GLDSTR 功能描述: 制造商:GOLDSTAR 功能描述: 制造商:undefined 功能描述: |
| MBM2149-45 | 制造商:FUGITSU 功能描述:2149-45 |
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