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参数资料
| 型号： | MBM150GR12A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 126K |
| 代理商： | MBM150GR12A |
VGE
=15V 14V13V12V
300
250
200
100
50
02
4
6
810
150
0
300
250
200
100
50
150
0
11V
TYPICAL
10V
9V
Collector
Current,
Ic
(A)
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=150A
Ic
=300A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
0
200
400
600
800
1000
TYPICAL
Gate
to
Emitter
V
oltage
,
V
GE
(V)
F
orw
ard
Current,
I
F
(A)
Gate Charge, QG (nC)
Gate charge characteristics
150
300
250
200
50
100
0
1
234
5
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-M150GR12A-0
Tc
=25°C
Ic
=150A
Ic
=300A
Pc
=1000W
VGE
=0V
Tc
=25°C
Tc
=125°C
Tc
=25°C
VGE
=15V 14V13V12V
02
4
6
8
10
0
11V
TYPICAL
10V
9V
Tc
=125°C
Tc
=125°C
Vcc
=600V
Ic
=150A
Tc
=25°C
相关PDF资料 |
PDF描述 |
|---|---|
| MBM150GR12A | 150 A, 1200 V, N-CHANNEL IGBT |
| MBM150GS12EBW | IGBT |
| MBM150GS6AW | 150 A, 600 V, N-CHANNEL IGBT |
| MBM200GR12A | 200 A, 1200 V, N-CHANNEL IGBT |
| MBM200GR12A | 200 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM20000 | 制造商:Red Lion Controls 功能描述:MOUNTING BRACKET, BOTTOM MOUNT KIT 制造商:Red Lion Controls 功能描述:BOTTOM MOUNT BRACKET KIT |
| MBM200A6 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES |
| MBM200GR6 | 制造商:n/a 功能描述:IGBT Module |
| MBM-2105G | 制造商: 功能描述: 制造商:GLDSTR 功能描述: 制造商:GOLDSTAR 功能描述: 制造商:undefined 功能描述: |
| MBM2149-45 | 制造商:FUGITSU 功能描述:2149-45 |
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