- 您现在的位置：买卖IC网 > PDF目录95880 > MBM200GS6AW 200 A, 600 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | MBM200GS6AW |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 113K |
| 代理商： | MBM200GS6AW |
VGE
=15V 13V12V
400
0
2
4
6
8
10
300
100
200
0
400
300
100
200
0
11V
TYPICAL
10V
9V
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=200A
Ic
=400A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Ic
=400A
Ic
=200A
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
0
200
400
600
800
1000
TYPICAL
Vcc
=300V
Ic
=200A
Tc
=25°C
Gate
to
Emitter
V
oltage
,
V
GE
(V)
Gate Charge, QG (nc)
Gate charge characteristics
400
300
200
100
0
1
2
3
4
5
F
orw
ard
Current,
I
F
(A)
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
VGE
=15V14V13V12V
0
2
4
6
8
10
11V
TYPICAL
10V
9V
Tc
=125°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-M200GS6AW-0
Tc
=25°C
Tc
=125°C
14V
Pc
=600W
VGE
=0
Tc
=25°C
Tc
=125°C
Tc
=25°C
相关PDF资料 |
PDF描述 |
|---|---|
| MBM300GS6AW | 300 A, 600 V, N-CHANNEL IGBT |
| MBM400GR6 | 400 A, 600 V, N-CHANNEL IGBT |
| MBN1200D25B | 1200 A, 2500 V, N-CHANNEL IGBT |
| MBN1200GS12AW | IGBT |
| MBN300GS12AW | IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM-2105G | 制造商: 功能描述: 制造商:GLDSTR 功能描述: 制造商:GOLDSTAR 功能描述: 制造商:undefined 功能描述: |
| MBM2149-45 | 制造商:FUGITSU 功能描述:2149-45 |
| MBM2212-20 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |
| MBM2212-25 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |
| mbm27128-20 | 制造商:FUJITSU 功能描述:MBM27128-20 |
发布紧急采购，3分钟左右您将得到回复。