PDE-M300GS6AW-0
IIIIG
G
GB
B
BT
TT
T M
M
MOD
OD
ODU
U
UL
LL
LE
E
MBM300GS6AW
Silicon N-channel IGBT
OUTLINE DRAWING
F
FF
FEA
EA
EAT
TT
TU
U
URE
RE
RES
SS
S
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item
Symbol
Unit
MBM300GS6AW
Collector Emitter Voltage
VCES
V
600
Gate Emitter Voltage
VGES
V
±20
Collector Current
DC
IC
300
1ms
ICp
A
600
Forward Current
DC
IF
300
(1)
1ms
IFM
A
600
Collector Power Dissipation
Pc
W
800
Junction Temperature
Tj
°C
-40 ~ +150
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
VISO
VRMS
2,500(AC 1 minute)
Screw Torque
Terminals
-
1.96(20)
(2)
Mounting
-
N.m
(kgf.cm)
1.96(20)
(3)
Notes:(1)RMS Current of Diode 90Arms max.
(2)(3)Recommended Value 1.67N.m(17kgf.cm)
CHARACTERISTICS (Tc=25°C )
Item
Symbol Unit
Min. Typ. Max.
Test Conditions
Collector Emitter Cut-Off Current
I CES
mA
-
1.0 VCE=600V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
VCE(sat)
V-
1.9
2.5 IC=300A,VGE=15V
Gate Emitter Threshold Voltage
VGE(TO)
V-
-
10
VCE=5V, IC =300mA
Input Capacitance
Cies
pF
-
15,000
-
VCE=10V,VGE=0V,f=1MHz
Rise Time
tr
-
0.25
0.5 VCC=300V
Turn On Time
ton
-
0.35
0.7 RL=1.0W
Fall Time
tf
-
0.25
0.35 RG=8.2W
(4)
Switching Times
Turn Off Time
toff
ms
-0.8
1.1 VGE=±15V
Peak Forward Voltage Drop
VFM
V-
2.2
3.0 IF=300A,VGE=0V
Reverse Recovery Time
trr
ms-
-
0.3 IF=300A,VGE=-10V, di/dt=300A/ms
IGBT
Rth(j-c)
-
0.156
Thermal Impedance
FWD
Rth(j-c)
°C/W
-
0.28
Junction to case
Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
Unit in mm
Weight: 265 (g)
TERMINALS
16
80
94
17
25
35
46
23
3-M5
4-Fast-on
Terminal
#110
C1
E2
C2E1
G2
E2
E1
G1
2-
φ5.6
6
12
7
39.5
30
35
φ0.8
E1
C1
G1
E2
G2
C2E1