参数资料
型号: MBM300GS6AW
元件分类: IGBT 晶体管
英文描述: 300 A, 600 V, N-CHANNEL IGBT
文件页数: 2/4页
文件大小: 113K
代理商: MBM300GS6AW
VGE
=15V 13V12V
600
0
2
4
6
8
10
400
500
100
200
300
0
600
400
500
100
200
300
0
11V
TYPICAL
10V
9V
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=300A
Ic
=600A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Ic
=600A
Ic
=300A
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
0
500
1000
1500
TYPICAL
Vcc
=300V
Ic
=300A
Tc
=25°C
Gate
to
Emitter
V
oltage
,
V
GE
(V)
Gate Charge, QG (nc)
Gate charge characteristics
400
500
600
300
200
100
0
1
2
3
4
5
F
orw
ard
Current,
I
F
(A)
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
0
2
4
6
8
10
11V
TYPICAL
10V
9V
Tc
=125°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-M300GS6AW-0
Tc
=25°C
14V
VGE
=15V 13V12V
14V
Pc
=800W
VGE
=0
Tc
=25°C
Tc
=125°C
Tc
=125°C
Tc
=25°C
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