- 您现在的位置：买卖IC网 > PDF目录224197 > MBM29DL162BD-70PFTN (FUJITSU LTD) 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 PDF资料下载
参数资料
| 型号： | MBM29DL162BD-70PFTN |
| 厂商： | FUJITSU LTD |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | PLASTIC, TSOP1-48 |
| 文件页数： | 23/74页 |
| 文件大小： | 1170K |
| 代理商： | MBM29DL162BD-70PFTN |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页当前第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页
MBM29DL16XTD/BD-70/90
3
s GENERAL DESCRIPTION
The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M
words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(1) and 48-ball FBGA Package.
These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V
VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in
standard EPROM programmers.
MBM29DL16XTD/BD are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate
memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability
of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either
a program or an erase) operation is simultaneously taking place on the other bank.
In the MBM29DL16XTD/BD, a new design concept is implemented, so called “Sliding Bank Architecture”. Under
this concept, the MBM29DL16XTD/BD can be produced a series of devices with different Bank 1/Bank 2 size
combinations; 0.5 Mb/15.5 Mb, 2 Mb/14 Mb, 4 Mb/12 Mb, 8 Mb/8 Mb.
The standard MBM29DL16XTD/BD offer access times 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29DL16XTD/BD are pin and command set compatible with JEDEC standard E2PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29DL16XTD/BD are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29DL16XTD/BD are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29DL16XTD/BD memories electrically erase the entire
chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed
one byte/word at a time using the EPROM programming mechanism of hot electron injection.
相关PDF资料 |
PDF描述 |
|---|---|
| MBM29LV008B-10PFTR | 1M X 8 FLASH 3V PROM, 100 ns, PDSO40 |
| MBR16100CT | 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20100WT | 10 A, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR30100PTP | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 |
| MBR3020WT-G | 30 A, SILICON, RECTIFIER DIODE, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM29DL162BD-70PFTR | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PBT | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PFTN | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PFTR | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BE | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation |
发布紧急采购，3分钟左右您将得到回复。