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参数资料
| 型号： | MBM29DL162BD-70PFTN |
| 厂商： | FUJITSU LTD |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | PLASTIC, TSOP1-48 |
| 文件页数： | 29/74页 |
| 文件大小： | 1170K |
| 代理商： | MBM29DL162BD-70PFTN |
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MBM29DL16XTD/BD-70/90
35
HiddenROM Protect Command
There are two methods to protect the HiddenROM area. One is to write the sector group protect setup
command(60h), set the sector address in the HiddenROM area and (A6, A1, A0) = (0,1,0), and write the sector
group protect command(60h) during the HiddenROM mode. The same command sequence could be used
because except that it is in the HiddenROM mode and that it does not apply high voltage to RESET pin, it is the
same as the extension sector group protect in the past. Please refer to “Function Explanation Extended
Command (3) Extended Sector Group Protection” for details of extention sector group protect setting.
The other is to apply high voltage (VID) to A9 and OE, set the sector address in the HiddenROM area and (A6,
A1, A0) = (0,1,0), and apply the write pulse during the HiddenROM mode. To verify the protect circuit, apply high
voltage (VID) to A9, specify (A6, A1, A0) = (0,1,0) and the sector address in the HiddenROM area, and read. When
“1” appears to DQ0, the protect setting is completed. “0” will appear to DQ0 if it is not protected. Please apply
write pulse agian. The same command sequence could be used for the above method because other than the
HiddenROM mode, it is the same as the sector group protect in the past. Please refer to “Function Explanation
Sector Group Protection” for details of sector group protect setting
Other sector group will be effected if the address other than the HiddenROM area is selected for the sector group
address, so please be carefull. Once it is protected, protection can not be cancelled, so please pay closest
attention.
Write Operation Status
Detailed in “Hardware Sequence Flags Table” are all the status flags that can determine the status of the bank
for the current mode operation. The read operation from the bank where is not operate Embedded Algorithm
returns a data of memory cell. These bits offer a method for determining whether a Embedded Algorithm is
completed properly. The information on DQ2 is address sensitive. This means that if an address from an erasing
sector is consectively read, then the DQ2 bit will toggle. However, DQ2 will not toggle if an address from a non-
erasing sector is consectively read. This allows the user to determine which sectors are erasing and which are not.
The status flag is not output from bank (non-busy bank) not executing Embedded Algorithm. For example, there
is bank (busy bank) which is now executing Embedded Algorithm. When the read sequence is [1] <busy bank>,
[2] <non-busy bank>, [3] <busy bank>, the DQ6 is toggling in the case of [1] and [3]. In case of [2], the data of
memory cell is outputted. In the erase-suspend read mode with the same read sequence, DQ6 will not be toggled
in the [1] and [3].
In the erase suspend read mode, DQ2 is toggled in the [1] and [3]. In case of [2], the data of memory cell is
outputted.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM29DL162BD-70PFTR | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PBT | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PFTN | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PFTR | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BE | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation |
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