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参数资料
| 型号： | MBM400GR6 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 400 A, 600 V, N-CHANNEL IGBT |
| 文件页数： | 3/4页 |
| 文件大小： | 66K |
| 代理商： | MBM400GR6 |
PDE-M400GR6-0
1.5
1
0.5
0
100
200
300
400
500
TYPICAL
Switching
Time,
t
(
s)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc
=300V
VGE
=±15V
RG
=6.2
TC
=25°C
Resistive Load
tr
tf
TYPICAL
10
1
0.1
1
10
100
Switching
Time,
t
(
s)
Gate Resistance, RG (
)
Switching time vs. Gate resistance
ton
toff
VCC
=300V
VGE
=±15V
IC
=400A
TC
=25°C
Resistive Load
tf
tr
TYPICAL
40
30
20
10
0
100
200
300
400
500
Switching
Loss,
Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
Err
Eton
Etoff
VCC
=300V
VGE
=±15V
RG
=6.2
TC
=125°C
Inductive Load
TYPICAL
100
10
1
0.1
1
10
100
Switching
Loss,
Et
on
,Et
off
,E
rr
(mJ/pulse)
Gate Resistance. RG (
)
Switching loss vs. Gate resistance
VCC
=300V
VGE
=±15V
IC
=400A
TC
=125°C
Inductive Load
Etoff
Err
Eton
10000
1000
100
10
1
0
200
400
600
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
VGE
=±15V
RG
=6.2
TC
≤125°C
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Thermal
Impedance,
R
th(j-c)
(
°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
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