参数资料
型号: MBN1200GR12A
元件分类: IGBT 晶体管
英文描述: 1200 A, 1200 V, N-CHANNEL IGBT
文件页数: 2/4页
文件大小: 123K
代理商: MBN1200GR12A
VGE
=15V 14V13V12V
2400
2200
1800
1400
1000
600
200
2000
1600
800
400
02
4
6
8
10
1200
0
2400
2200
1800
1400
1000
600
200
2000
1600
800
400
1200
0
11V
TYPICAL
10V
9V
Collector
Current,
Ic
(A)
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=2400A
Ic
=1200A
10
8
2
4
6
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
0
4800
2400
7200
9600
12000
TYPICAL
Vcc
=600V
Ic
=1200A
Tc
=25°C
Gate
to
Emitter
V
oltage
,
V
GE
(V)
F
orw
ard
Current,
I
F
(A)
Gate Charge, QG (nC)
Gate charge characteristics
1200
2400
2200
1800
1400
1000
600
200
2000
1600
400
800
0
1
234
5
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-N1200GR12A-0
Tc
=25°C
Ic
=2400A
Ic
=1200A
Pc
=8330W
VGE
=0V
Tc
=25°C
Tc
=125°C
Tc
=25°C
VGE
=15V 14V13V12V
02
4
6
8
10
11V
TYPICAL
10V
9V
Tc
=125°C
Tc
=125°C
相关PDF资料
PDF描述
MBN1200GR12A 1200 A, 1200 V, N-CHANNEL IGBT
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