参数资料
型号: MBR0520PBF
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.5 A, 20 V, SILICON, SIGNAL DIODE
封装: SOD-123, 2 PIN
文件页数: 2/6页
文件大小: 115K
代理商: MBR0520PBF
MBR0520
Bulletin PD-20226 rev. A 10/06
2
www.irf.com
Part number
Value
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
20
Voltage Ratings
I
F
Max. Average Forward Current
0.5
A
DC, T
L = 129°C
I
FSM
Max.PeakOneCycleNon-Repetitive
55
A
5μs Sine or 3μs Rect. pulse
Surge Current, @ 25°C
6.5
A
10msSineor6msRect. pulse
Parameters
Value Units
Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM applied
T
J
Max.Junction Temperature Range(*)
- 65 to 150
°C
T
stg
Max. Storage Temperature Range
- 65 to 150
°C
R
thJL Max. Thermal Resistance Junction
150
°C/W Mounted on PC board FR4 with minimum pad size
to Lead
R
thJA Max. Thermal Resistance Junction
200
°C/W 1 inch square pad size (1 x 0.5 inch for each lead) on
to Ambient
FR4 board
Wt
Approximate Weight
0.012
gr
Case Style
SOD123
Device Marking
AYWLC
Thermal-Mechanical Specifications
Parameters
Value
Units
Conditions
V
FM
Max. Forward Voltage Drop
(1)
0.375
V
@ 0.1A
T
J = 25°C
0.440
V
@ 0.5A
V
FM
Max. Forward Voltage Drop
(1)
0.260
V
@ 0.1A
T
J = 100°C
0.360
V
@ 0.5A
I
RM
Max. Reverse Leakage
(1)
40
μATJ = 25°C
V
R = 10V
Current
3
mA
TJ = 100°C
150
μATJ = 25°C
V
R = 20V
7mA
TJ = 100°C
C
T
Max. Junction Capacitance
110
pF
V
R = 5VDC (test signal range 100KHz to 1Mhz), TJ = 25°C
dv/dt Max. Voltage Rate of Change
10000
V/μs
(Rated VR)
Electrical Specifications
Parameters
Value
Units
Conditions
(1) Pulse Width < 300μs, Duty Cycle < 2%
(*)dPtot
1
dTj
Rth( j-a)
<
thermal runaway condition for a diode on its own heatsink
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相关代理商/技术参数
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