参数资料
型号: MBR10100-E3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 3/5页
文件大小: 131K
代理商: MBR10100-E3/45
Document Number: 88665
Revision: 03-Apr-07
www.vishay.com
3
MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0
0.2
0.1
0.5
1.0
0.4
0.3
5
50
20
10
0.5
1
3
0.6
0.7
0.8
0.9
Tj = 100 °C
Tj = 150 °C
Tj = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
1.0
10
0.01
0.1
20
0
100
40
60
80
Tj = 100 °C
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
Figure 5. Typical Transient Thermal Impedance
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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