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参数资料
| 型号： | MBR10100-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 4/5页 |
| 文件大小： | 131K |
| 代理商： | MBR10100-E3/45 |
www.vishay.com
4
Document Number: 88665
Revision: 03-Apr-07
Vishay General Semiconductor
MBR(F,B)1090 & MBR(F,B)10100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027(0.68)
0.205(5.20)
0.195(4.95)
0.560 (14.22)
0.530 (13.46)
0.022(0.56)
0.014(0.36)
0.110 (2.79)
0.100 (2.54)
12
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.057 (1.45)
0.045 (1.14)
CASE
PIN 2
PIN 1
TO-220AC
0.404 (10.26)
0.384 (9.75)
See note
0.076 Ref.
(1.93) ref.
45° Ref.
0.600 (15.24)
0.580 (14.73)
PIN
1
2
0.560 (14.22)
0.530 (13.46)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.076 Ref.
(1.93) Ref.
See note
7° Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
7° Ref.
0.350 (8.89)
0.330 (8.38)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08)DIA.
7° Ref.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
ITO-220AC
exposure
(0.25)
0.010
Max.
Copper
Note: Copper exposure is allowable for 0.005 (0.13) Max. from the body
0.380 (9.65)
0.41
1 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591(15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.110 (2.79)
0.090 (2.29)
0.047 (1.19)
0.055 (1.40)
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.105 (2.67)
0.08
(0.095) (2.41)
(2.032)
0.42
(10.66)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81)
0.33
(8.38)
Mounting Pad Layout
MIN.
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB1545CT-HE3/45 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB20H45CT-HE3/45 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB20H60CT-E3/81 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2550CT-E3/81 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H45CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10100-E34W | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Trench MOS Schottky technology |
| MBR10100F | 制造商:ASEMI 制造商全称:ASEMI 功能描述:MBR10100FDual High-Voltage Schottky Rectifiers |
| MBR10100FCT | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述: |
| MBR10100G | 功能描述:肖特基二极管与整流器 10A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR10100-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,100V,TRENCH SKY RECT. |
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