- 您现在的位置：买卖IC网 > PDF目录39579 > MBR10100CT 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR10100CT |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 221K |
| 代理商： | MBR10100CT |
Voltage
45 to 200 V
Current
10 A
May - 07
High current capability
The plastic material
U/L recognition 94 V-0
Terminals: Leads solderable per
MIL-STD202
Low forward Voltage drop
MBR10CT
(both diodes conducting)
65 to + 175 °C
10 A
120 A
31
45
65 to + 150 °C
MBR1045CT
45
42
60
140
200
1.5 °C/W
0.57 V
0.80 V
0.65 V
MBR1045CT
0.70 V
MBR1060CT
MBR10200CT
1.0 A
MBR10100CT
0.85 V
0.75 V
TO-220AB
10 Amp. Schottky Barrier Rectifier
Absolute Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics
70
100
MBR10100CT
MBR10200CT
0.88 V
0.78 V
0.10 mA
0.5 A
Common Cathode
Suffix "C"
1
3
2
VF
Max. forward voltage drop
at IF = 5 A
IR
Max. Instantaneous reverse
Rthj-c
Typical Thermal Resistance
Tj = 25 °C
IRRM
Peak repetitive reverse surge current
Tj = 125 °C
Tj = 25 °C
Peak recurrent reverse voltage (V)
Maximum RMS voltage (V)
Maximum DC blocking voltage (V)
Maximum average Forward current
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating temperature range
Storage temperature range
IFSM
8.3 ms. peak forward surge current
(Jedec Method)
at TC = 125 °C
current at VR = VRRMax
Metal silicon junction, majority carrier
conduction
相关PDF资料 |
PDF描述 |
|---|---|
| MBR10150CT | 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10200CT | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10100CT | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10200F | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1060F | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10100CT _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR10100CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 100V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR10100CT/45 | 功能描述:肖特基二极管与整流器 10 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR10100CT_1 | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Schottky Barrier Diode |
| MBR10100CT_12 | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 10Amp 100Volt |
发布紧急采购，3分钟左右您将得到回复。