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参数资料
| 型号： | MBR10100CTF-E1 |
| 厂商： | BCD SEMICONDUCTOR MANUFACTURING LTD |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-220F, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 430K |
| 代理商： | MBR10100CTF-E1 |
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Apr. 2009 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
Ordering Information
MBR10100C
-
Circuit Type
E1: Lead Free
G1: Green
Package
T: TO-220-3/TO-220-3 (2)
Blank: Tube
TF: TO-220F-3
Part Number
Marking ID
Package
Lead Free
Green
Lead Free
Green
Packing
Type
TO-220-3/
TO-220-3 (2)
MBR10100CT-E1
MBR10100CT-
G1
MBR10100CT-E1
MBR10100CT-
G1
Tube
TO-220F-3
MBR10100CTF-E
1
MBR10100CTF
-G1
MBR10100CTF-E1
MBR10100CTF
-G1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ <
1/
θJA.
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 138°C
IF(AV)
5
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 138°C
IFRM
10
A
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, 60Hz)
IFSM
100
A
Operating Junction Temperature Range（Note 2）
TJ
150
°C
Storage Temperature Range
TSTG
-55 to 150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/
s
ESD Ratings: Machine Model = C
Human Body Model =3B
> 400
> 8000
V
相关PDF资料 |
PDF描述 |
|---|---|
| MBR10100DC | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR10200DC | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR10100 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1045 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1050 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10100CTF-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10100CT-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10100CT-HE3/45 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR10100CT-LJ | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 100V 5A TO220AB |
| MBR10100CT-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,100V,TRENCH SKY RECT. |
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