参数资料
型号: MBR10100CTF-E1
厂商: BCD SEMICONDUCTOR MANUFACTURING LTD
元件分类: 整流器
英文描述: 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: ROHS COMPLIANT, PLASTIC, TO-220F, 3 PIN
文件页数: 5/9页
文件大小: 430K
代理商: MBR10100CTF-E1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Apr. 2009 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
Typical Performance Characteristics
Figure 4. Typical Forward Voltage Per Diode
Figure 5. Typical Reverse Current Per Diode
Figure6. Average Forward Current vs.
Case Temperature (Per Diode)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.01
0.1
1
10
100
T
J
=150
0C
T
J=125
0C
In
st
an
ta
n
e
o
u
s
F
o
rw
ar
d
C
u
rr
e
n
t(
A
)
Instantaneous Forward Voltage(V)
T
J=25C
0
2040
6080
100
1E-3
0.01
0.1
1
10
100
1000
10000
T
J
=150
0C
T
J=125
0C
In
s
ta
n
ta
ne
ou
s
Re
ve
rs
e
Cu
rr
en
t(
A)
Percent of Rated Peak Reverse Voltage(%)
T
J=25
0C
0
1
2
3
4
5
6
7
8
9
10
100
105
110
115
120
125
130
135
140
145
150
155
Case Temperature (°C)
A
v
e
rage
F
o
rward
Curren
t(A
MPS)
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相关代理商/技术参数
参数描述
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