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参数资料
| 型号： | MBR1090CT-E3/4W |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 123K |
| 代理商： | MBR1090CT-E3/4W |
New Product
MBR1090CT, MBR10100CT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89125
Revision: 26-Apr-10
2
Notes
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR1090CT
MBR10100CT
UNIT
Maximum instantaneous forward voltage per diode (1)
IF = 5.0 A
TC = 125 °C
TC = 25 °C
VF
0.75
0.85
V
Maximum reverse current per diode at working peak
reverse voltage (2)
TJ = 25 °C
TJ = 100 °C
IR
100
6.0
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090CT
MBR10100CT
UNIT
Typical thermal resistance per diode
RθJC
4.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR10100CT-E3/4W
1.87
4W
50/tube
Tube
Figure 1. Forward Current Derating Curve
0
2
4
6
10
0
50
100
150
8
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
20
60
40
100
80
120
1
100
10
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| MBR1090CT-E3 | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10100CT-E3 | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10H100-HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR10H90-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRB10H90-HE3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR1090CT-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,90V,TRENCH SKY RECT. |
| MBR1090DC | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| MBR1090-E3/45 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 90V 10A 2-Pin(2+Tab) TO-220AC Tube 制造商:Vishay Semiconductors 功能描述:SCHOTTKY 90V 10A 2PIN TO-220AC - Rail/Tube |
| MBR1090-E3/4W | 功能描述:肖特基二极管与整流器 90 Volt 10A Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1090F | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:10 Amp Schottky Barrier Rectifier 20 to 100 Volts |
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