参数资料
型号: MBR1090CT-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 1/3页
文件大小: 94K
代理商: MBR1090CT-E3
MBR1090CT thru MBR10100CT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88666
www.vishay.com
23-Apr-03
1
New Product
Dual High-Voltage Schottky Rectifiers
Reverse Voltage 90 to 100V
Forward Current 10A
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Mechanical Data
Case: JEDEC TO-220AB molded plastic body over
passivated chips
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
TO-220AB
12
3
PIN
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
CASE
1.148 (29.16)
1.118 (28.40)
PIN 2
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
PIN 1
PIN 3
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR1090CT
MBR10100CT
Unit
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
Total device
10
at TC = 105°C
Per leg
IF(AV)
5
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
120
A
superimposed on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at tp = 2
s, 1KHZ
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Typical thermal resistance per leg
R
θJC
4.4
°C/W
Operating junction and storage temperature range
TJ, TSTG
–65 to +150
°C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR1090CT
MBR10100CT
Unit
Maximum instantaneous
at IF = 5.0A, TC = 125°C
VF
0.75
V
forward voltage per leg(4)
at IF = 5.0A, TC = 25°C
0.85
Maximum reverse current per leg
TJ = 25°C
100
A
at working peak reverse voltage(4)
TJ = 100°C
IR
6.0
mA
Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(4) Pulse test: 300
s pulse width, 1% duty cycle
Dimensions in inches and (millimeters)
相关PDF资料
PDF描述
MBR10100CT-E3 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR10H100-HE3/45 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR10H90-E3/45 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRB10H90-HE3/45 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRF10H90-E3/45 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC
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