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参数资料
| 型号： | MBR1090CT-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 94K |
| 代理商： | MBR1090CT-E3 |
MBR1090CT thru MBR10100CT
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88666
2
23-Apr-03
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
0.2
1.0
1.2
1.4
1.6
0.4
100
10
0.1
0.01
1.0
0
2
4
6
10
0
50
100
150
8
0
20
60
40
100
80
120
110
100
0.6
0.8
0.01
0.001
0.1
1
10
100
0.0001
0.01
110
10
100
0.1
1
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
TJ = 175°C
I R
--
Instantaneous
Reverse
Current
(mA)
Junction
Capacitance
(pF)
1
10
100
10
100
1000
0.1
1
Fig. 6 – Typical Junction Capacitance
Per Leg
Reverse Voltage (V)
0
20
100
40
60
80
Fig. 1 – Forward Current Derating Curve
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Fig. 4 – Typical Reverse
Characteristics Per Leg
Fig. 5 – Typical Transient
Thermal Impedance Per Leg
t -- Pulse Duration (sec.)
Instantaneous Forward Voltage (V)
Case Temperature (
°C)
Number of Cycles at 60 HZ
Percent of Rated Peak Reverse Voltage (%)
Average
Forward
Current
(A)
Peak
Forward
Surge
Current
(A)
I F
--
Instantaneous
Forward
Current
(A)
Transient
Thermal
Impedance
(
°C/W)
TJ = 25°C
100
°C
150
°C
Resistive or Inductive Load
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = 150°C
125
°C
100
°C
25
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MBR10100CT-E3 | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10H100-HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR10H90-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRB10H90-HE3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF10H90-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR1090CT-E3/45 | 功能描述:肖特基二极管与整流器 10 Amp 90 Volt Dual 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1090CT-E3/4W | 功能描述:肖特基二极管与整流器 10 Amp 90 Volt Dual 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1090CT-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,90V,TRENCH SKY RECT. |
| MBR1090DC | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| MBR1090-E3/45 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 90V 10A 2-Pin(2+Tab) TO-220AC Tube 制造商:Vishay Semiconductors 功能描述:SCHOTTKY 90V 10A 2PIN TO-220AC - Rail/Tube |
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