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参数资料
| 型号： | MBR1090CT |
| 厂商： | DIODES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 83K |
| 代理商： | MBR1090CT |
1
Rectifier Device Data
. . . using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
Guard–Ring for Stress Protection
Low Forward Voltage
150
°
C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8
″
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead Temperature for Soldering Purposes: 260
°
C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B1060, B1070, B1080, B1090, B10100
MAXIMUM RATINGS
Rating
Symbol
MBR
Unit
1060
1070
1080
1090
10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
70
80
90
100
Volts
Average Rectified Forward Current (Rated VR) TC = 133
°
C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133
°
C
IF(AV)
IFRM
10
Amps
20
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
Amps
Peak Repetitive Reverse Surge Current (2.0
μ
s, 1.0 kHz)
IRRM
TJ
Tstg
dv/dt
0.5
Amp
Operating Junction Temperature
65 to +150
°
C
Storage Temperature
65 to +175
°
C
Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS
10,000
V/
μ
s
Maximum Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
2.0
60
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 10 Amps, TC = 125
°
C)
(iF = 10 Amps, TC = 25
°
C)
(iF = 20 Amps, TC = 125
°
C)
(iF = 20 Amps, TC = 25
°
C)
vF
0.7
0.8
0.85
0.95
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TC = 125
°
C)
(Rated dc Voltage, TC = 25
°
C)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
iR
6.0
0.10
mA
SWITCHMODE is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBR1060/D
SEMICONDUCTOR TECHNICAL DATA
3
1, 4
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
60 to 100 VOLTS
CASE 221B–03
TO–220AC
MBR1060 and MBR10100 are
Motorola Preferred Devices
1
3
4
Rev 2
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| MBRD1035CTL | 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR1090CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 90V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR1090CT_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High Voltage Schottky Rectifier |
| MBR1090CT-E3/45 | 功能描述:肖特基二极管与整流器 10 Amp 90 Volt Dual 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1090CT-E3/4W | 功能描述:肖特基二极管与整流器 10 Amp 90 Volt Dual 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1090CT-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,90V,TRENCH SKY RECT. |
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