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参数资料
| 型号： | MBRD1035CTL |
| 厂商： | DIODES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 5 A, 35 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, DPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 158K |
| 代理商： | MBRD1035CTL |
1
Motorola, Inc. 1998
DPAK Power Surface Mount Package
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State of the art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies, free wheeling diode and polarity protection
diodes.
Highly Stable Oxide Passivated Junction
Guardring for Stress Protection
Matched dual die construction – May be Paralleled for High Current Output
High dv/dt Capability
Short Heat Sink Tap Manufactured – Not Sheared
Very Low Forward Voltage Drop
Epoxy Meets UL94, VO at 1/8”
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Shipped in 75 units per plastic tube
Available in 16 mm Tape and Reel, 2500 units per Reel,
Add “T4’’ to Suffix part #
Marking: B1035CL
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35
Volts
Average Rectified Forward Current
(At Rated VR, TC = 115
°
C)
Per Leg
Per Package
IO
5
10
Amps
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 115
°
C)
Per Leg
IFRM
10
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Per Package
IFSM
50
Amps
Storage / Operating Case Temperature
Tstg, Tc
TJ
dv/dt
–55 to +125
°
C
Operating Junction Temperature
–55 to +125
°
C
Voltage Rate of Change (Rated VR, TJ = 25
°
C)
THERMAL CHARACTERISTICS
10,000
V/
μ
s
Thermal Resistance – Junction to Case
Per Leg
R
θ
JC
R
θ
JA
2.43
°
C/W
Thermal Resistance – Junction to Ambient (1)
Per Leg
68
°
C/W
(1) Rating applies when using minimum pad size, FR4 PC Board
SWITCHMODE is a trademark of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MBRD1035CTL/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
35 VOLTS
CASE 369A–13
DPAK
1
3
4
1
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRD1035CTL_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE Schottky Power Rectifier |
| MBRD1035CTLG | 功能描述:肖特基二极管与整流器 10A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD1035CTL-T | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER |
| MBRD1035CTLT4 | 功能描述:肖特基二极管与整流器 10A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD1035CTLT4G | 功能描述:肖特基二极管与整流器 10A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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