参数资料
型号: MBRD1035CTL
厂商: DIODES INC
元件分类: 参考电压二极管
英文描述: 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
中文描述: 5 A, 35 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, DPAK-3
文件页数: 3/6页
文件大小: 158K
代理商: MBRD1035CTL
3
Rectifier Device Data
Figure 5. Current Derating Per Leg
Figure 6. Forward Power Dissipation Per Leg
Figure 7. Capacitance Per Leg
120
0
TL, LEAD TEMPERATURE (
°
C)
8.0
7.0
5.0
6.0
4.0
VR, DC REVERSE VOLTAGE (VOLTS)
25
0
105
85
75
65
0
VR, REVERSE VOLTAGE (VOLTS)
100
10
I
C
3.0
2.0
1.0
60
20
40
80
100
140
30
35
5
10
15
20
95
115
125
5
10
15
20
25
0
T
1000
TJ = 25
°
C
freq = 20 kHz
Ipk/Io =
Ipk/Io = 20
dc
SQUARE WAVE
(50% DUTY CYCLE)
IO, AVERAGE FORWARD CURRENT (AMPS)
1.0
0
4.0
3.0
2.0
1.0
0
2.0
P
3.0
4.0
5.0
6.0
7.0
8.0
3.5
2.5
1.5
0.5
Ipk/Io = 20
SQUARE WAVE
(50% DUTY CYCLE)
dc
Figure 8. Typical Operating Temperature
Derating Per Leg *
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io =
°
RJA = 84
°
C/W
RJA = 67.5
°
C/W
RJA = 48
°
C/W
RJA = 25
°
C/W
RJA = 2.43
°
C/W
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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