- 您现在的位置：买卖IC网 > PDF目录53718 > MBR1090CT (SENSITRON SEMICONDUCTOR) 5 A, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR1090CT |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 83K |
| 代理商： | MBR1090CT |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR1080/90/100CT
MBRB1080/90/100CT
MBR1080/90/100CT-1
Data Sheet 2942, Rev. C
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
80
MBR1080CT
MBRB1080CT
MBR1080CT-1
90
MBR1090CT
MBRB1090CT
MBR1090CT-1
Peak Inverse Voltage
VRWM
-
100
MBR10100CT
MBRB10100CT
MBR10100CT-1
V
5(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC
=100°C, rectangular wave
form
10(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
120
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 5A, Pulse, TJ = 25
°C
@ 10 A, Pulse, TJ = 25 °C
0.85
0.95
V
VF2
@ 5 A, Pulse, TJ = 125 °C
@ 10 A, Pulse, TJ = 125 °C
0.75
0.85
V
Max. Reverse Current (per
leg) *
IR1
@VR = rated VR
TJ = 25 °C
1.00
mA
IR2
@VR = rated VR
TJ = 125
°C
15
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25
°C
fSIG = 1MHz
300
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
(only for TO-220)
0.50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB1100CT | 5 A, SILICON, RECTIFIER DIODE |
| MBR1080CT | 5 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR12035 | 120 A, 35 V, SILICON, RECTIFIER DIODE |
| MBR12045 | 120 A, 45 V, SILICON, RECTIFIER DIODE |
| MBR12040 | 120 A, 40 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR1090CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 90V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR1090CT_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High Voltage Schottky Rectifier |
| MBR1090CT-E3/45 | 功能描述:肖特基二极管与整流器 10 Amp 90 Volt Dual 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1090CT-E3/4W | 功能描述:肖特基二极管与整流器 10 Amp 90 Volt Dual 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1090CT-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,90V,TRENCH SKY RECT. |
发布紧急采购，3分钟左右您将得到回复。