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参数资料
| 型号： | MBR12040 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 整流器 |
| 英文描述： | 120 A, 40 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-1 |
| 文件页数： | 1/2页 |
| 文件大小： | 111K |
| 代理商： | MBR12040 |
39.62
19.69
Maximum
Sq.
Dia.
19.18
30.28
4.06
14.73
4.06
15.88
38.61
18.42
Minimum
Millimeter
3.96
13.34
3.86
18.92
30.02
15.37
Dia.
3.30
12.83
3.05
12.57
1.52
.725
.745
1.182
.156
.525
.152
.605
B
A
D
E
G
J
H
F
C
Dim. Inches
Minimum
.120
.495
K
L
1.56
.130
.160
.580
.160
1.192
.625
.505
1/4-20 UNC-2B
.755
.775
Maximum
Notes
B
D
J
G
C
F
K
L
E
A
H
Std. Polarity
Base is cathode
Rev. Polarity
Base is anode
ROHS Compliant
124NQ040
MBR12045
MBR12040
MBR12035
124NQ045
120NQ045
124NQ035
Industry
120NQ035
120NQ040
Part Number
v
Guard Ring Protection
Reverse Energy Tested
150°C Junction Temperature
Schottky Barrier Rectifier
120 Amperes/45 Volts
RRM 35 - 45 Volts
35V
40V
45V
Reverse Voltage
Repetitive Peak
Microsemi
Catalog Number
HS12035*
HS12040*
HS12045*
Working Peak
Reverse Voltage
35V
40V
45V
* Add Suffix R for Reverse Polarity
C = 100°C, Square wave,
0JC = .40°C/W
R
T
I
V
T
8.3ms, half sine,
J = 125°C
f = 1 KHZ, 25°C
RRM,
J = 125°C*
RRM,
J = 25°C
R = 5.0V,
C = 25°C
FM = 120A:
J = 25°C*
FM = 120A:
J = 125°C*
I
I F(AV)
2A
I
VFM
FM
V
I
C
I
R(OV)
RM
FSM
J
Maximum surge current
Max peak reverse current
Max peak forward voltage
Average forward current
Maximum repetitive reverse current
Typical junction capacitance
2 Amps
5500pF
Electrical Characteristics
*Pulse test: Pulse width 300sec, Duty cycle 2%
120 Amps
2000 Amps
0.55 Volts
0.49 Volts
5mA
Thermal and Mechanical Characteristics
0.40°C/W
0.12°C/W
Case to sink
Junction to case
-55°C to 150°C
20-25 inch pounds
1.1 ounces (32 grams) typical
35-40 inch pounds
T
R
J
T
STG
OJC
OCS
Storage temp range
Max thermal resistance
Terminal Torque
Typical thermal resistance (greased)
Operating junction temp range
Weight
Mounting Base Torque
HS12035 - HS12045
120 Amp Schottky Rectifier
January, 2011 - Rev. 5
www.microsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| MBR12040CT | 60 A, 40 V, SILICON, RECTIFIER DIODE |
| MBR12045CT | 60 A, 45 V, SILICON, RECTIFIER DIODE |
| MBR120HW-T3 | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBR150RL | 1 A, 50 V, SILICON, SIGNAL DIODE |
| MBR160RL | 1 A, 60 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR12040CT | 功能描述:肖特基二极管与整流器 40V 120A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR12040CTR | 功能描述:肖特基二极管与整流器 40V 120A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR12040R | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 120A |
| MBR12045 | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 120A |
| MBR12045CT | 功能描述:肖特基二极管与整流器 45V 120A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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