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参数资料
型号： MBR150RL
厂商： MOTOROLA INC
元件分类： 二极管(射频、小信号、开关、功率)
英文描述： 1 A, 50 V, SILICON, SIGNAL DIODE
文件页数： 1/4页
文件大小： 95K
代理商： MBR150RL
1
Rectifier Device Data
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16
″ from case
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode Indicated by Polarity Band
Marking: B150, B160
MAXIMUM RATINGS
Rating
Symbol
MBR150
MBR160
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
60
Volts
RMS Reverse Voltage
VR(RMS)
35
42
Volts
Average Rectified Forward Current (2)
(VR(equiv) v 0.2 VR(dc), TL = 90°C, R
θJA = 80°C/W, P.C. Board Mounting,
see Note 3, TA = 55°C)
IO
1
Amp
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C)
IFSM
25 (for one cycle)
Amps
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
TJ, Tstg
*65 to +150
°C
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150
°C
THERMAL CHARACTERISTICS (Notes 3 and 4)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
80
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 0.1 A)
(iF = 1 A)
(iF = 3 A)
vF
0.550
0.750
1.000
Volt
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
(TL = 25°C)
(TL = 100°C)
iR
0.5
5
mA
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
(2) Lead Temperature reference is cathode lead 1/32
″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MBR150/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBR150
MBR160
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
50, 60 VOLTS
CASE 59–04
PLASTIC
MBR160 is a
Motorola Preferred Device
Rev 1
相关PDF资料
PDF描述
MBR160RL 1 A, 60 V, SILICON, SIGNAL DIODE
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MBRB1535CT/45 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
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相关代理商/技术参数
参数描述
MBR150RLG 功能描述:肖特基二极管与整流器 1A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR150TR 功能描述:DIODE SCHOTTKY 50V 1A DO-204AL RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879
MBR150TR 制造商:International Rectifier 功能描述:Schottky Rectifier
MBR15100CT 功能描述:肖特基二极管与整流器 15 Amp 100 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR15100CT C0 制造商:SKMI/Taiwan 功能描述:Diode Schottky 100V 15A 3-Pin(3+Tab) TO-220AB Tube
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