参数资料
型号: MBR150RL
厂商: MOTOROLA INC
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 50 V, SILICON, SIGNAL DIODE
文件页数: 2/4页
文件大小: 95K
代理商: MBR150RL
MBR150 MBR160
2
Rectifier Device Data
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Forward Power Dissipation
1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
40
70
0
0.1
0.05
0.001
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.0
0
4.0
2.0
0
2.0
i F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
I
P
F(A
V)
,A
VERAGE
FOR
W
ARD
0.1
0.6
0.2
0.4
0.8
1.0
50
60
10
20
30
10
3.0
4.0
5.0
0
1.6
5.0
3.0
1.0
,REVERSE
CURRENT
(mA)
R
0.2
0.5
1.0
0.02
0.01
0.005
0.002
TJ = 150°C
100
°C
25
°C
IPK/IAV = 20
SQUARE
WAVE
dc
10
5
TJ = 150°C
*The curves shown are typical for the highest voltage device in the volt-
age grouping. Typical reverse current for lower voltage selections can
be estimated from these same curves if VR is sufficiently below rated VR.
125
°C
5.0
2.0
100
°C
75
°C
25
°C
POWER
DISSIP
A
TION
(W
A
TTS)
1.2
0.07
0.05
0.03
0.02
0.2
0.3
0.5
0.7
2.0
3.0
5.0
7.0
p
THERMAL CHARACTERISTICS
Figure 4. Thermal Response
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1 k
2 k
5 k
10 k
0.07
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.7
0.5
0.3
0.2
1.0
Z
θJL(t) = ZθJL r(t)
Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
TJL = Ppk RθJL [D + (1 – D) r(t1 + tp) + r(tp) – r(t1)]
where
TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Figure 4, i.e.:
r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
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