参数资料
型号: MBR10H150CT-E3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 2/5页
文件大小: 114K
代理商: MBR10H150CT-E3/45
MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88779
Revision: 18-Apr-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage per
diode (1)
IF = 5.0 A
IF = 10 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
0.88
0.72
0.96
0.80
V
Maximum reverse current per diode at
working peak reverse voltage (1)
TJ = 25 °C
TJ = 125 °C
IR
5.0
1.0
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance per diode
RθJC
2.4
4.5
2.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR10H150CT-E3/45
2.06
45
50/tube
Tube
ITO-220AB
MBRF10H150CT-E3/45
2.20
45
50/tube
Tube
TO-262AA
SB10H150CT-1E3/45
1.58
45
50/tube
Tube
Figure 1. Forward Derating Curve (Total)
0
2
4
6
8
10
12
25
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
20
40
60
80
200
180
160
140
120
100
10
1
100
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
相关PDF资料
PDF描述
MBR2080CT-F 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR20100CT-F 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR24045 240 A, 45 V, SILICON, RECTIFIER DIODE
MBR30040CT 150 A, 40 V, SILICON, RECTIFIER DIODE
MBR30035CT 150 A, 35 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
MBR10H200CT 功能描述:肖特基二极管与整流器 10 Amp 200 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR10H35 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers
MBR10H45 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers
MBR10H45/45 功能描述:肖特基二极管与整流器 45 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR10H45-E3/45 功能描述:肖特基二极管与整流器 45 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel