- 您现在的位置：买卖IC网 > PDF目录229523 > MBR12040CT (MICROSEMI POWER PRODUCTS GROUP) 60 A, 40 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | MBR12040CT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 60 A, 40 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 118K |
| 代理商： | MBR12040CT |
ROHS Compliant
R(OV) 2 Amps
FSM 1000 Amps
F(AV) 60 Amps
F(AV) 120 Amps
CPT12035 - CPT12050
*Pulse test: Pulse width 300sec, Duty cycle 2%
Thermal and Mechanical Characteristics
copper
Baseplate: Nickel plated
D=Doubler
Baseplate
Common Cathode
Baseplate
A=Common Anode
Baseplate
Electrical Characteristics
Reverse Voltage
Repetitive Peak
Schottky PowerMod
*Add Suffix A for Common Anode, D for Doubler
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center bolt must be torqued first
Weight
current per leg
per leg
per pkg
Max thermal resistance per leg
Max thermal resistance per pkg
Max peak reverse current
Typical thermal resistance (greased)
Terminal Torque
Typical junction capacitance per leg
Storage temp range
Operation junction temp range
Maximum repetitive reverse
Average forward current
Maximum surge current
Max peak forward voltage
Max peak reverse current
Average forward current
RM 3 mA
R
0
R
0
CS
JC
STG
T J
R0
T
JC
J 2700 pF
C
l
RM 40 mA
FM .63 Volts
FM .80 Volts
V
I
V
I
l
Catalog Number
H
Q
Working Peak
Reverse Voltage
40V
45V
50V
35V
CPT12040*
CPT12045*
CPT12050*
CPT12035*
Microsemi
V
U
N
W
F
E
50V
45V
40V
35V
Notes:
U
C
B
G
R
A
8-10 inch pounds
30-40 inch pounds
2.8 ounces (75 grams) typical
35-50 inch pounds
-55° C to 175° C
8.3ms, half sine, J = 175°C
RRM, J = 125°C*
FM = 120A: J = 25°C*
FM = 120A: J = 175°C
R = 5.0V, J = 25°C
0.08° C/W
0.43° C/W
0.85° C/W
V
T
C = 140°C
T
I
V
I
T
C = 140°C
T
Junction to case
Case to sink
R
T
R
Dia.
1/4-20
Notes
0.800
0.130
0.510
---
3.150 BSC
---
0.630
---
0.290
0.340
0.195
Schottky Barrier Rectifier
Guard Ring Protection
120 Amperes/35 to 50 Volts
Reverse Energy Tested
175°C Junction Temperature
U 0.600
0.312
0.180
V
W
---
0.275
Q
R
N
1.375 BSC
0.010
0.490
G
H
F
0.700
---
0.120
C
E
B
34.92 BSC
80.01 BSC
15.24
---
7.92
4.57
6.99
17.78
---
3.05
12.45
0.25
---
7.37
8.64
4.95
20.32
3.30
12.95
16.00
---
3.630
Max.
Dim. Inches
---
Min.
A
Millimeters
---
Min.
92.20
Max.
Industry
Part Number
MBR12035CT
MBR12040CT
MBR12045CT
,Square wave,
0JC = 0.43°C/W
f = 1 KHZ, 25° C, 1sec square wave
RRM, J = 25°C
,Square wave, 0JC = 0.85°C/W
January, 2010 - Rev. 6
www.microsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| MA1.5KE200E3TR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MA1.5KE220E3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MA1.5KE22CATRE3 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MA1.5KE27E3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MA1.5KE300ATRE3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR12040CTR | 功能描述:肖特基二极管与整流器 40V 120A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR12040R | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 120A |
| MBR12045 | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 120A |
| MBR12045CT | 功能描述:肖特基二极管与整流器 45V 120A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR12045CTR | 功能描述:肖特基二极管与整流器 45V 120A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。