参数资料
型号: MBR120VLSFT1
厂商: ON Semiconductor
文件页数: 4/6页
文件大小: 61K
描述: DIODE SCHOTTKY 20V 1A SOD123FL
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 10
二极管类型: 肖特基
电压 - (Vr)(最大): 20V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 340mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 600µA @ 20V
安装类型: 表面贴装
封装/外壳: SOD-123F
供应商设备封装: SOD-123L
包装: 剪切带 (CT)
工具箱: SCHOTTRECA-KIT-ND - KIT SCHOTTKY RECT SMD SAMPLE
其它名称: MBR120VLSFT1OSCT
MBR120VLSFT1
http://onsemi.com
4
C, CAPACITANCE (pF)
26 184810
12
14
0
VR, REVERSE VOLTAGE (VOLTS)
500
100
0
TJ
= 25
°C
20
16
Figure 7. Capacitance
T
J
, DERATED OPERATING
TEMPERATURE (
°
C)
2.0 4.0 8.0 10 2012
14 16 18
0
VR, DC REVERSE VOLTAGE (VOLTS)
125
100
65
6.0
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ
therefore must include forward and reverse power effects. The allowable operating
TJ
may be calculated from the equation: T
J
= T
Jmax
? r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
? r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
70
75
80
85
90
95
105
110
115
120
RJA
= 25.6
°C/W
400°C/W
324.9°C/W
235°C/W
130°C/W
200
300
400
r(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response
1000
0.0001 0.001 0.01 1 10 1000.1
0.000001
0.00001
t1, TIME (sec)
1000
1
0.1
10
100
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
JA = 321.8 °C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
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