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参数资料
| 型号： | MBR15H60CT-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 146K |
| 代理商： | MBR15H60CT-E3/45 |
New Product
MBR(F,B)15H35CT thru MBR(F,B)15H60CT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88782
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Automotive grade AEC Q101 qualified
Electrostatic discharge capacitor voltage human
body model: C = 100 F, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR15H35CT
MBR15H45CT
MBR15H50CT
MBR15H60CT UNIT
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR15H35CT
MBR15H45CT
MBR15H50CT
MBR15H60CT
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum instantaneous forward
voltage per diode (1)
IF = 7.5 A
IF = 15 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
-
0.50
-
0.61
0.63
0.55
0.75
0.66
-
0.58
-
0.68
0.73
0.61
0.87
0.72
V
Maximum reverse current
at rated VR per diode
(2)
TJ = 25 °C
TJ = 125 °C
IR
-
3.0
50
10
-
2.0
50
10
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Maximum thermal resistance per diode
RθJC
3.0
5.0
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR15H45CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF15H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB15H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB15H45CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
MBR15H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF15H45CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB15H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB15H45CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
相关PDF资料 |
PDF描述 |
|---|---|
| MBR15H60CT-HE3/45 | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB15H35CT-HE3/81 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB15H45CT-HE3/45 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB15H45CT-HE3/81 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB15H50CT-E3/45 | 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
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| MBR160HWTR | 功能描述:PIV 60V IO 1A VF 0 72V PACKAGE S 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:有效 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:60V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:720mV @ 1A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:300μA @ 60V 不同?Vr，F 时的电容:30pF @ 5V，1MHz 安装类型:表面贴装 封装/外壳:SOD-123 供应商器件封装:SOD-123 工作温度 - 结:-55°C ~ 125°C 标准包装:1 |
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