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参数资料
| 型号： | MBR1H100SFT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 101K |
| 描述： | DIODE SCHOTTKY 1A 100V SOD-123FL |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 760mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 40µA @ 100V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123F |
| 供应商设备封装： | SOD-123FL |
| 包装： | 标准包装 |
| 其它名称： | MBR1H100SFT3GOSDKR |
    MBR1H100SFT3G, NRVB1H100SFT3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 100 V Average Rectified Forward Current (TL = 162 °C) IO 1.0 A Non?Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Storage and Operating Junction Temperature Range (Note 1) Tstg, TJ ?65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction?to?Lead (Note 2) JCL 23 °C/W Thermal Resistance, Junction?to?Ambient (Note 2) RJA 85 °C/W Thermal Resistance, Junction?to?Ambient (Note 3) RJA 330 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, T J = 25 °C) (IF = 2.0 A, T J = 25 °C) (IF = 1.0 A, T J = 125 °C) (IF = 2.0 A, T J = 125 °C) VF 0.76 0.84 0.61 0.68 V Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25 °C) (Rated dc Voltage, TJ = 125 °C) IR 40 0.5 A mA 2. Mounted with 700 mm2 copper pad size (Approximately 1 in 2) 1 oz FR4 Board. 2 copper, 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm 4. Pulse Test: Pulse Width ≤ 380 s, Duty Cycle ≤ 2.0%. |
相关PDF资料 |
PDF描述 |
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| MBR3100 | DIODE SCHOTTKY 3A 100V DO-201AD |
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相关代理商/技术参数 |
参数描述 |
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| MBR20 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SCHOTTKY RECTIFIER |
| MBR200100 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:200 Amp Rectifier 20 to 100 Volts Schottky Barrier |
| MBR200100CT | 功能描述:肖特基二极管与整流器 SI PWR SCHOTTKY 2TWR 20-100V 200A100P/70R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR200100CTR | 功能描述:肖特基二极管与整流器 SI PWR SCHOTTKY 2TWR 20-100V 200A100P/70R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR200100CTS | 功能描述:肖特基二极管与整流器 100V 200A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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