- 您现在的位置：买卖IC网 > PDF目录39582 > MBR20100CT-E3/45 (VISHAY SEMICONDUCTORS) 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR20100CT-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 146K |
| 代理商： | MBR20100CT-E3/45 |
Vishay General Semiconductor
MBR(F,B)2090CT & MBR(F,B)20100CT
Document Number: 88672
Revision: 03-Apr-07
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, free-wheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
Tj max
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR2090CT
MBR20100CT
ITO-220AB
MBRB2090CT
MBRB20100CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
1
2
3
MBRF2090CT
MBRF20100CT
PIN 2
PIN 1
PIN 3
TO-263AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2090CT
MBR20100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
Total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
V
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB2090CT-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2090CT-E3/81 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF2090CT-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20100CT-E3/81 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR2090CT-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20100CT-E3-4W | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBR20100CT-F | 制造商:Diodes Incorporated 功能描述:MBR20100CT-F - Bulk |
| MBR20100CTG | 功能描述:肖特基二极管与整流器 20A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20100CT-G | 功能描述:肖特基二极管与整流器 100V, 20A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20100CTG-1 | 功能描述:肖特基二极管与整流器 20 Amp 100 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。