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参数资料
| 型号： | MBR20100CTW |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 132K |
| 代理商： | MBR20100CTW |
MBR20100CTW
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
– 100 Volts
FORWARD CURRENT
– 20 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High surge¤t capability, low VF
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case: TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position: Any
Max. mounting torque=0.5 N.m (5.1 Kgf.cm)
Case Material: “Green” molding compound, UL flammability
classification 94V-0, (No Br. Sb. Cl.)
Terminal finish : Matted plating
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
MBR20100CTW
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
100
V
Maximum RMS Voltage
VRMS
70
V
Maximum DC Blocking Voltage
VDC(AV)
100
V
Average Rectified Output Current
@Tc=110°C
IF
20
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
IFSM
150
A
Maximum Forward Voltage
Note(1)
IF=10A@
IF=20A@
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VF
0.85
0.75
0.95
0.85
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C
IR
0.01
10
mA
Typical thermal resistance Junction to Case (Note 3)
RΘJC
2.5
°C/W
Typical thermal resistance Junction to Lead (Note 3)
RΘJL
2.5
°C/W
Typical Thermal Resistance (Note 2)
CJ
250
pF
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Note :
REV. 1, Jan-2011, KTHC96
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(3)
Thermal Resistance test performed in accordance with JESD-51. Unit mounted on 0.75t glass-epoxy substrate with 75 x 75 x 2 copper plate
heatsink, pad.
相关PDF资料 |
PDF描述 |
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| MBR20120CE | 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR20120CT-1 | 10 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR20120CT-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20150CT | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20200CT-BP | 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20100F | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR20100FCT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:20 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBR20100FCTE3/TU | 制造商:Microsemi Corporation 功能描述:20A, 100V, VF=0.80V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 20A 100V ITO220AB |
| MBR20100H | 制造商:ASEMI 制造商全称:ASEMI 功能描述:MBR20100Dual High-Voltage Schottky Rectifiers |
| MBR20100P | 制造商:IRF 制造商全称:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
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