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参数资料
| 型号： | MBR20120CE |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, I2PAK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 118K |
| 代理商： | MBR20120CE |
MBR20120CE
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
– 120 Volts
FORWARD CURRENT
– 20 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High surge¤t capability, low VF
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case: TO-262AA molded plastic
Plastic package has UL flammability classification
94V-0
Terminals: Solderable per MIL-STD-202 Method 208
Moisture sensitivity: level 1 per J-STD-020D
Lead Free Finish, RoHS Compliant
Polarity: As marked on the body
Weight: 0.0571 ounces, 1.62 grams
Mounting position: Any
I
2PAK
I
2PAK
DIM.
MIN.
MAX.
A
9.65
10.69
B
1.14
1.40
C
8.25
9.25
D
-
1.40
F
-
6.35
G
12.70
14.73
H
2.29
2.79
I
0.51
1.14
J
0.3
0.64
K
3.56
4.83
N
2.03
2.92
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL
MBR20120CE
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
120
V
Maximum RMS Voltage
VRMS
84
V
Maximum DC Blocking Voltage
VDC
120
V
Average Rectified Output Current
@Tc=115°C
IF(AV)
20
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
IFSM
120
A
Maximum Forward Voltage
Note(1)
IF=10A@
Tj=25°C
Tj=125°C
VF
0.9
0.72
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C
IR
700
15
uA
mA
Typical thermal resistance Junction to Case
RΘJC
2.5
°C/W
Typical thermal resistance Junction to Lead
RΘJL
1.8
°C/W
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Note :
REV. 1,Oct-2010, KTHA21
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(3)
Thermal Resistance test performed in accordance with JESD-51. Unit mounted on 0.75t glass-epoxy substrate with 75 x 75 x 2 copper plate
heatsink, pad.
相关PDF资料 |
PDF描述 |
|---|---|
| MBR20120CT-1 | 10 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR20120CT-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20150CT | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20200CT-BP | 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20200FCTP | 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20120CT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:20 Amp High Voltage Power Schottky Barrier Rectifier 120Volts |
| MBR20120CT_08 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:20 Amp High Voltage Power Schottky Barrier Rectifier 120Volts |
| MBR20120FCT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:20 Am p High Voltage Power Schottky Barrier Rectifier 120 Volts |
| MBR20120FCT_10 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:20 Amp HighVoltage Power Schottky Barrier Rectifier 120 Volts |
| MBR20150 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:20 Amp High Voltage 150Volts Barrier Rectifier Power Schottky |
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