参数资料
型号: MBR20120CE
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 整流器
英文描述: 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-262AA
封装: ROHS COMPLIANT, PLASTIC, I2PAK-3
文件页数: 2/3页
文件大小: 118K
代理商: MBR20120CE
RATING AND CHARACTERISTIC CURVES
MBR20120CE
FIG.1- FORWARD CURRENT DERATING CURVE
0
5
10
15
20
25
0
25
50
75
100
125
150
CASE TEMPERATURE, ( C)
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT
0
20
40
60
80
100
120
1
10
100
NUMBER O F CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
(A
)
FIG.3- TYPICAL JUNCTION CAPACITANCE
10
100
1000
1
10
100
REVERSE,VOLTAGE
C
a
p
a
c
it
a
n
c
e
,(
p
F
)
FIG.4 - TYP ICAL FORWARD CHARACTERISTICS
0.01
0.1
1
10
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
INSTANTANEOUS FORWARD VOLTAGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.3- TYPICAL REVERS E CHARACTERISTICS
0.0001
0.001
0.01
0.1
1
10
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VO LTAGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(m
A
)
O
PULSE WIDTH 300us,
2% Duty Cycle
8.3ms Single Half Sine-Wave
RESISTIVE OR INDUCTIVE LOAD
Tj=25°C
Tj=125°C
Tj=25°C
相关PDF资料
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MBR20120CT-1 10 A, SILICON, RECTIFIER DIODE, TO-262AA
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