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参数资料
| 型号： | MBR20150PT |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | LEAD FREE, PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 271K |
| 代理商： | MBR20150PT |
Voltage
45 V to 150 V
Current
20 A
Jul - 09
Peak Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC blocking voltage (V)
Maximum Average Forward Rectified Current
See Fig.
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating Junction Temperature Range
Storage temperature range
– 65 to + 175 °C
IFSM
20 A
150 A
– 65 to + 150 °C
IRRM
MBR2045PT ....... MBR20150PT
Absolute Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics
TO-3P
20.0 Amp. Schottky Barrier Rectifier
1
2
3
MBR
2045PT
45
31
Common Cathode
Suffix "C"
1
3
2
Case
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Low power loss, high efficiency.
Cases: JEDEC TO-3P/TO-247AD molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Mounting position: Any
Weight: 5.6 grams
Mechanical Data
High temperature soldering guaranteed:
260°C/10 seconds, 4.3mm from case
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
High current capability, low forward voltage drop
Polarity: As marked
Mounting torque: 10 in. - lbs. max
Metal silicon junction, majority carrier conduction
MBR
2060PT
60
42
MBR
20100PT
100
70
MBR
20150PT
150
105
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
0.5 A
1.0 A
VF
IR
Rthj-C
Maximum Thermal Resistance Per Leg (Note 3)
-
1.0 °C/W
Maximum Instantaneous Forward Voltage at (Note 2)
IF = 7.5 A, Tc = 25 °C
IF = 7.5 A, Tc = 125 °C
IF = 15 A, Tc = 25 °C
IF = 15 A, Tc = 125 °C
10 mA
0.57 V
0.84 V
0.72 V
0.85 V
0.75 V
0.95 V
0.85 V
0.95 V
0.92 V
1.02 V
0.98 V
0.80 V
0.70 V
0.95 V
0.85 V
Max. Instantaneous Reverse Current @ TC=25°C
at Rated DC Blocking Voltage (Note 2) @ TC=125°C
15 mA
0.1 mA
5.0 mA
MBR
2045PT
MBR
2060PT
MBR
20100PT
MBR
20150PT
0.1 mA
Notes:
1. 2.0s Pulse Width, f=1.0 KHz
2. Pulse Test: 300s Pulse Width, 1% Duty Cycle
3. Thermal Resistance from junction to Case Per Leg. With Heatsink Size of 101.6 mm x 152.4 mm x 6.35 mm Al-Plate.
相关PDF资料 |
PDF描述 |
|---|---|
| MBR2080CT | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2090CT | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2560CT | 25 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR300100CT | 150 A, 100 V, SILICON, RECTIFIER DIODE |
| MBR3045CTW | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20150SC | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR20150SCT-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR20150SCTF-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR20150SCTF-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR20150SCT-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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