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参数资料
| 型号： | MBR2030CT-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/3页 |
| 文件大小： | 66K |
| 描述： | DIODE SCHOTTKY 20A 30V TO-220AB |
| 标准包装： | 2,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 840mV @ 20A |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 30V |
| 电流 - 平均整流 (Io)（每个二极管）： | 20A |
| 电压 - (Vr)（最大）： | 30V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 盒 |
QW-BB046
Page 1
REV:B
Electrical Characteristics
(at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
V
oltage: 30 to 150 V
Current: 20.0
A
RoHS Device
MBR2030CT-G Thru. MBR20150CT-G
Dimensions
in
inches
and
(millimeter)
TO-220AB
Comchip Technology CO., LTD.
(3.20)
0.126
0.055(1.40)
0.047(1.20)
0.148(3.80)
0.187(4.70)
0.531(13.50)
0.583(14.80)
0.610(15.50)
0.583(14.80)
0.157
(4.0)
0.230(5.80)
0.270(6.90)
0.108
(2.75)
0.153(3.90)
0.146(3.70)
0.347( 9.50)
0.413(10.50)
0.024(0.60)
0.012(0.30)
0.051(1.30)
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
MAX
Parameter
Symbol
2030CT
-G
2040CT-G
-G
Unit
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current ( See Fig.1 )
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load(JEDEC Method)
Operating Temperature Range
Storage Temperature Range
30
21
30
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
TJ
TSTG
150
0.10
-55 to +150
-55 to +175
V
V
V
A
A
V
mA
40
28
40
50
35
50
60
42
60
80
56
80
100
70
100
150
105
150
20.0
Maximum DC Reverse Current
@
TJ= 25°C
at Rate DC Blocking V
oltage
@
TJ= 125°C
MBR
MBR
MBR
2050CT-G
MBR
2060CT-G
MBR
2080CT-G
20100CT-G
20150CT
MBR
MBR
Peak Forward Voltage
(Note 1)
IF=10A@ TJ= 25°C
IF=10A@ TJ=125°C
IF=20A@ TJ= 25°C
IF=20A@ TJ=125°C
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.95
0.85
1.05
0.95
0.10
15.0
10.0
0.10
7.50
0.10
5.00
Typical Junction Capacitance (Note2)
CJ
400
320
pF
Typical Thermal Resistance (Note3)
RθJC
1.50
°C/W
3.50
°C
°C
3. Thermal resistance junction to case.
SMD
Schottky
Barrier
Rectifiers
Features
-Metal of silicon rectifier
, majority carrier conduction.
-
High current capability,
-High surge capacity
.
Mechanical Data
-Guard ring for transient protection.
-Low power loss, high ef
ficiency.
-Epoxy: UL
94-V0 rate flame retardant.
-Mounting position:
Any
-Case:
TO-220AB, molded plastic
-W
eight: 2.24 grams
low VF.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
-Polarity:
As marked on the body.
Comchip
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