参数资料
型号: MBR2045CT
厂商: ON Semiconductor
文件页数: 2/8页
文件大小: 118K
描述: DIODE SCHOTTKY 45V 10A TO220AB
产品变化通告: Product Discontinuation 27/Jun/2007
标准包装: 50
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 570mV @ 10A
电流 - 在 Vr 时反向漏电: 100µA @ 45V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 45V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: MBR2045CTOS
MBR2045CT, MBRF2045CT
http://onsemi.com
2
TO?220AB
Figure 1. Marking Diagrams
AYWW
MBR2045CTG
AKA
TO?220 FULLPAK
AYWW
B2045G
AKA
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
AKA = Diode Polarity
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
45
V
Average Rectified Forward Current
Per Device
Per Diode (TC
= 165
°C)
IF(AV)
20
10
A
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC
= 163
°C)
IFRM
20
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
See Figure 13
IRRM
1.0
A
Storage Temperature Range
Tstg
?65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
(MBR2045CT)
?
Junction
?to?Case
?
Junction
?to?Ambient
(MBRF2045CT)
?
Junction
?to?Case
?
Junction
?to?Ambient
RJC
RJA
RJC
RJA
2.0
60
4.75
75
°C/W
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