参数资料
型号: MBR2045CT
厂商: ON Semiconductor
文件页数: 6/8页
文件大小: 118K
描述: DIODE SCHOTTKY 45V 10A TO220AB
产品变化通告: Product Discontinuation 27/Jun/2007
标准包装: 50
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 570mV @ 10A
电流 - 在 Vr 时反向漏电: 100µA @ 45V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 45V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: MBR2045CTOS
MBR2045CT, MBRF2045CT
http://onsemi.com
6
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
2.0 s
1.0 kHz
12 V 100
VCC
12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 k
+150 V, 10 mAdc
4.0 F
+
VR, REVERSE VOLTAGE (VOLTS)
1000
500
300
0
05010 20 30
40
700
C, CAPACITANCE (pF)
Figure 12. Typical Capacitance
200
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
TJ
= 25
°C
f = 1 MHz
100
600
400
800
900
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