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参数资料
| 型号： | MBR2045CTPBF |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 1/7页 |
| 文件大小： | 155K |
| 描述： | DIODE SCHOTTKY 45V 10A TO220AB |
| 产品目录绘图： | TO-220AB Series Side TO-220AB Series Circuit |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 570mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 45V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 45V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *MBR2045CTPBF VS-MBR2045CTPBF VS-MBR2045CTPBF-ND VSMBR2045CTPBF VSMBR2045CTPBF-ND |
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
1
Document Number: 94288
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 10 A
FEATURES
? 150 °C TJ
operation
? Low forward voltage drop
? High frequency operation
? High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
? Guard ring for enhanced ruggedness and long
term reliability
? Compliant to RoHS Directive 2002/95/EC
? Designed and qualified according to JEDEC-JESD47
? Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV)
2 x 10 A
VR
35 V, 45 V
VF
at I
F
0.57 V
IRM
max. 15 mA at 125 °C
TJ
max. 150 °C
Diode variation Common cathode
EAS
8 mJ
Anode
13Common
2
Base
2
common
cathode
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS VALUES UNITS
IF(AV)
Rectangular waveform (per device)
20 A
VRRM
35/45 V
IFRM
TC
= 135 °C (per leg) 20
A
IFSM
tp
= 5 μs sine 1060
VF
10 Apk, TJ
= 125 °C 0.57 V
TJ
Range
- 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR2035CTPbF VS-MBR2035CT-N3 VS-MBR2045CTPbF VS-MBR2045CT-N3 UNITS
Maximum DC reverse
voltage
VR
35 35 45 45 V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
IF(AV)
TC
= 135 °C, rated V
R
10
A
per device
20
Peak repetitive forward current per leg
IFRM
Rated VR, square wave, 20 kHz, TC
= 135 °C 20
Non-repetitive peak surge current
IFSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated VRRM
applied
1060
Surge applied at rated load condition half wave,
single phase, 60 Hz
150
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ
maximum V
A
= 1.5 x V
R
typical
2
Non-repetitive avalanche energy per leg
EAS
TJ
= 25 °C, I
AS
= 2 A, L = 4 mH 8 mJ
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