参数资料
型号: MBR2045CTPBF
厂商: Vishay Semiconductors
文件页数: 4/7页
文件大小: 155K
描述: DIODE SCHOTTKY 45V 10A TO220AB
产品目录绘图: TO-220AB Series Side
TO-220AB Series Circuit
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 570mV @ 10A
电流 - 在 Vr 时反向漏电: 100µA @ 45V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 45V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: *MBR2045CTPBF
VS-MBR2045CTPBF
VS-MBR2045CTPBF-ND
VSMBR2045CTPBF
VSMBR2045CTPBF-ND
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
4
Document Number: 94288
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repeti
tive Surge Current (Per Leg)
Note
(1)
Formula used: TC
= T
J
- (Pd + Pd
REV) x RthJC;
Pd = Forward power loss = IF(AV)
x V
FM
at (I
F(AV)/D) (see fig. 6);
PdREV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
093612 15
IF(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
130
See note (1)
15010
Square wave (D = 0.50)RMS limit
Rated VR
applied
4
120
140
DC
145
135
125
0
0122468
10
14
16
Average Power Loss (W)
IF(AV)
- Average Forward Current (A)
2
6
8
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100 1000
tp
- Square Wave Pulse Duration (μs)
I
FSM
- Non-Repetitive Surge Current (A)
100
10 000
10
1000
At any rated load condition
and with rated VRRM
applied
following surge
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