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参数资料
| 型号： | MBR2060CT-E3/45 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 502K |
| 描述： | DIODE SCHOT 20A 60V DUAL TO220-3 |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 150µA @ 60V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 60V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88674
Revision: 08-Nov-07
2
Note:
(1) Pulse test: 300
μs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR2035CT MBR2045CT MBR2050CT MBR2060CT UNIT
Maximum instantaneous
forward voltage per diode (1)
IF
= 10 A
IF
= 10 A
IF
= 20 A
IF
= 20 A
TC
= 25 °C
TC
= 125 °C
TC
= 25 °C
TC
= 125 °C
VF
0.65
0.57
0.84
0.72
0.80
0.70
0.95
0.85
V
Maximum reverse current
per diode at rated DC
blocking voltage per diode (1)
TC
= 25 °C
TC
= 125 °C
IR
0.1
15
0.15
15
mA
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical resistance from junction to case per diode RθJC
2.0 5.0 2.0 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR2045CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF2045CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB2045CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB2045CT-E3/81 1.35 81 800/reel Tape reel
TO-220AB MBR2045CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB MBRF2045CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB MBRB2045CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB MBRB2045CTHE3/81
(1)
1.35 81 800/reel Tape reel
Figure 1. Forward Derating Curve (Total)
0
4
8
12
20
0
50
100
150
16
Resistive or Inductive Load
A
v
erage For
w
ard C
u
rrent (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
60
40
80
140
120
100
160
1
100
10
TJ
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
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| MBR2060CTF-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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| MBR2060CTG | 功能描述:肖特基二极管与整流器 20A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2060CT-G | 功能描述:肖特基二极管与整流器 60V, 20A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2060CT-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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