参数资料
型号: MBR30060CT
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: 整流器
英文描述: 150 A, 60 V, SILICON, RECTIFIER DIODE
封装: ROHS COMPLIANT PACKAGE-2
文件页数: 1/2页
文件大小: 117K
代理商: MBR30060CT
ROHS Compliant
Schottky PowerMod
CPT30060
Baseplate
A=Common Anode
Baseplate
Common Cathode
Baseplate
D=Doubler
Baseplate: Nickel plated
copper
Thermal and Mechanical Characteristics
4300 pF
4.0 mA
75 mA
.68 Volts
.82 Volts
2 Amps
2000 Amps
150 Amps
300 Amps
*Pulse test: Pulse width 300 sec, Duty cycle 2%
Electrical Characteristics
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
Terminal Torque
Typical thermal resistance (greased)
Max thermal resistance per leg
Operating junction temp range
Storage temp range
Maximum repetitive reverse current per leg
Typical junction capacitance per leg
Max peak reverse current per leg
Max peak forward voltage per leg
Maximum surge current per leg
Average forward current per leg
Average forward current per pkg
Mounting Base Torque (outside holes)
C
STG
OCS
OJC
R
TJ
T
J
F(AV)
R(OV)
RM
FSM
V
I
FM
I
FM
V
I
F(AV)
I
Catalog Number
H
Q
60V
Reverse Voltage
Working Peak
*Add Suffix A for Common Anode, D for Doubler
CPT30060*
Microsemi
U
N
W
F
V
E
Notes:
Repetitive Peak
Reverse Voltage
60V
U
C
B
G
R
A
C = 127°C, Square wave,
0JC = 0.40°C/W
C = 127°C, Square wave,
0JC = 0.20°C/W
30-40 inch pounds
2.8 ounces (75 grams) typical
8-10 inch pounds
Case to sink
Junction to case
-55°C to 175°C
R = 5.0V, C = 25°C
RRM, J = 25°C
RRM, J = 125°C*
FM = 200A: J = 175°C*
FM = 200A: J = 25°C*
f = 1 KHZ, 25°C, 1sec square wave
8.3ms, half sine, J = 175°C
35-50 inch pounds
V
0.08°C/W
0.40°C/W
T
I
V
I
T
R
Dia.
1/4-20
Notes
0.800
0.630
0.130
0.510
---
0.290
---
0.195
3.150 BSC
---
.340
N
U 0.600
0.312
0.180
W
V
0.275
---
Q
R
1.375 BSC
0.490
0.010
G
H
F
0.700
---
0.120
C
E
B
34.92 BSC
80.01 BSC
15.24
7.92
4.57
---
6.99
17.78
---
3.05
12.45
0.25
7.37
---
4.95
---
8.64
20.32
16.00
3.30
12.95
---
3.630
Max.
Dim. Inches
Min.
---
A
Millimeters
---
Min.
92.20
Max.
Max thermal resistance per pkg
OJC
R
Junction to case
0.20°C/W
Part Number
MBRP20060CT
Industry
MBRP30060CT
MBR30060CT
MBR20060CT
Reverse Energy Tested
Schottky Barrier Rectifier
Guard Ring Protection
175°C Junction Temperature
300 Amperes/60 Volts
January, 2010 - Rev. 6
www.microsemi.com
相关PDF资料
PDF描述
MBR30100PT-E3 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR3090PT 30 A, 90 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR30200CT 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3040CT 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3040PT 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-247AD
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