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参数资料
| 型号： | MBR3050PT-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 87K |
| 代理商： | MBR3050PT-E3/45 |
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V to 60 V
IFSM
200 A
VF
0.60 V, 0.65 V
TJ max.
150 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
Note:
(1) 2.0 s pulse width, f = 1.0 kHz
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
30
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200
A
Peak repetitive reverse surge current per diode (1)
IRRM
2.0
1.0
A
Voltage rate of change at (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR3050ST | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR3060 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:30 Amp Rectifier 20 to 100 Volts Schottky Barrier |
| MBR3060/3P | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR3060CT | 功能描述:肖特基二极管与整流器 30A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3060CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 30A 3-Pin(3+Tab) TO-220AB Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 60V 30A 3-Pin(3+Tab) TO-220AB Tube |
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