参数资料
型号: MBR3050PT-E3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD
封装: ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN
文件页数: 3/4页
文件大小: 87K
代理商: MBR3050PT-E3/45
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0
0.2
0.1
0.5
1.0
0.4
0.3
0.6
0.7
0.8
0.9
T
J = 150 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
1
10
100
0.01
0.001
0.1
20
0
100
40
60
80
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
J = 125 °C
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
10 000
100
0.1
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086(2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
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