参数资料
型号: MBR40250G
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 114K
描述: DIODE SCHOTTKY 40A 250V TO-220AC
产品目录绘图: Rectifier TO-220AC, TO-220B
标准包装: 50
系列: SWITCHMODE™
二极管类型: 肖特基
电压 - (Vr)(最大): 250V
电流 - 平均整流 (Io): 40A
电压 - 在 If 时为正向 (Vf)(最大): 970mV @ 40A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 30µA @ 250V
电容@ Vr, F: 500pF @ 5V,1MHz
安装类型: 通孔
封装/外壳: TO-220-2
供应商设备封装: TO-220-2
包装: 管件
产品目录页面: 1568 (CN2011-ZH PDF)
其它名称: MBR40250G-ND
MBR40250GOS
MBR40250, MBR40250T, MBRF40250T, MBRB40250T
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
250
V
Average Rectified Forward Current
(Rated VR) TC
= 82
°C MBR40250, MBR40250T, MBRB40250T
(Rated VR) TC
= 46
°C MBRF40250T
IF(AV)
40
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC
= 82
°C MBR40250, MBR40250T, MBRB40250T
(Rated VR, Square Wave, 20 kHz) TC
= 46
°C MBRF40250T
IFRM
80
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Storage Temperature
Tstg
65 to +175
°C
Operating Junction Temperature
TJ
65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance Junction?to?Case
MBR40250(T) and MBRB40250T
MBRF40250
Junction?to?Ambient
MBR40250(T)
MBRF40250
MBRB40250T
RJC
RJA
2.0
3.0
60
50
50
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
IF
= 20 A, T
C
= 25
°C
IF
= 20 A, T
C
= 125
°C
IF
= 40 A, T
C
= 25
°C
IF
= 40 A, T
C
= 125
°C
VF
0.86
0.71
0.97
0.86
V
Maximum Instantaneous Reverse Current (Note 1)
Rated DC Voltage, TC
= 25
°C
Rated DC Voltage, TC
= 125
°C
IR
0.25
30
mA
Maximum Reverse Recovery Time
IF
= 1.0 A, di/dt = 50 A/
s, TC
= 25
°C
trr
35
ns
DYNAMIC CHARACTERISTICS
Capacitance VR
=
?5.0 V, TC
= 25
°C, Frequency = 1.0 MHz
CT
500
pF
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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MBR40250G 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER 40A 250V TO-220AC 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 40A, 250V, TO-220AC
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