参数资料
型号: MBR5H100MFST1G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 99K
描述: DIODE SCHOTTKY 100V 5A SO-8FL
标准包装: 1
系列: SWITCHMODE™
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 5A
电压 - 在 If 时为正向 (Vf)(最大): 730mV @ 5A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 100µA @ 100V
安装类型: 表面贴装
封装/外壳: 8-TDFN 裸露焊盘(5 引线)
供应商设备封装: 6-DFN,8-SO 扁平引线(5x6)
包装: 标准包装
其它名称: MBR5H100MFST1GOSDKR
MBR5H100MFS, NRVB5H100MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
Figure 3. Typical Reverse Current
Characteristics
Figure 4. Maximum Reverse Current
Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
50 70 10090
80
60
40
30
20
10
0
1.E?10
30 70 10090
80
60
50
40
20
10
0
Figure 5. Typical Junction Capacitance Figure 6. Forward Surge Safe Operating Area
VR, REVERSE VOLTAGE (V) PULSE DURATION (ms)
40 70 10090
80
60
50
30
20
10
0
10
100
1000
10,000
4.0
3.0
2.0
1.0
0
140
160
180
200
220
260
280
300
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
C
J
, JUNCTION CAPACITANCE (pF)
MAXIMUM FORWARD SURGE CURRENT (A)
?40°C
25°C
150°C
125°C
175°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E?09
1.E?08
1.E?07
1.E?06
1.E?05
1.E?04
1.E?03
1.E?02
1.E+00
1.E?08
1.E?07
1.E?06
1.E?05
1.E?04
1.E?03
1.E?02
1.E+00
1.E?01
?40°C
25°C
150°C
125°C
175°C
240
Single pulse non?repetitive square
wave 25°C ambient
Mounted on a minimum pad, FR4
board, 1 oz. copper pour
1.E?01
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.2 1.4 2.01.8
1.6
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
?40°C
25°C
150°C
125°C
175°C
1.2 1.4 2.01.8
1.6
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
?40°C
25°C
125°C
175°C
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