参数资料
型号: MBR760
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 整流器
英文描述: 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
封装: PLASTIC PACKAGE-2
文件页数: 1/3页
文件大小: 79K
代理商: MBR760
MBR730 thru MBR760
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBR730
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
7.5
150
-
0.57
0.84
0.72
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
TJ =25 C
CJ
Typical Junction Capacitance (Note 3)
400
pF
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR )
TJ =125 C
dv/dt
10000
V/us
IF =7.5A @
IF =15A @
MBR735
35
24.5
35
MBR740
40
28
40
MBR745
45
31.5
45
MBR750
50
35
50
MBR760
60
42
60
V
0.75
0.65
-
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
15
mA
0.5
50
Typical Thermal Resistance (Note 2)
3.5
C/W
R0JC
TJ =25 C
TO-220AC
All Dimensions in millimeter
TO-220AC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
5.33
N
M
L
K
J
I
1.14
4.83
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2
CASE
PIN
1
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 7.5 Amperes
NOTES : 1. 300us Pulse Width, Duty Cycle 2%
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
TJ =125 C
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
REV. 5,Oct-2010, KTHA02
相关PDF资料
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MBR8100L 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
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