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参数资料
| 型号： | MBR8200F |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 89K |
| 代理商： | MBR8200F |
PAGE . 2
STAD-APR.30.2009
MBR840F~MBR8200F
PRELIMINAR
Y
RATING AND CHARACTERISTIC CURVES
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
AMPERES
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
40
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
.5
.6
.7
.8
.9
1.0
1.1
1.2
50V~60V
80V~100V
150V~200V
40V~45V
INST
ANT
ANEOUS
REVERSE
CURRENT
,m
A
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
120
140
10
1.0
0.1
.01
.001
0
20406080
100
T =100 C
J
O
T=
J
75 C
O
T=
J
25 C
O
CASE TEMPERATURE, C
O
10.0
8.0
4.0
0
2.0
6.0
0
20
40
60
80
100
120
140
160
180
A
VERAGE
F
OR
W
A
RD
RECTIFIED
CURRENT
AMPERES
=40V
= 45-200V
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
PEAK
FOR
W
ARD
SURGE
CURRENT
AMPERES
NO. OF CYCLE AT 60Hz
150
120
110
90
70
50
30
20
10
1
2
5
10
20
50
100
8.3ms Single
Half Since-Wave
JEDEC Method
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PDF描述 |
|---|---|
| MBR890F | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR830 | 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR840 | 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRA120TRPBF | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRA120TR | 1 A, 20 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR8200FCT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBR830 | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR830MFST1G | 制造商:ON Semiconductor 功能描述:8.0 A 30 V SCHOTTKY DIOD - Tape and Reel |
| MBR830MFST3G | 制造商:ON Semiconductor 功能描述:8.0 A 30 V SCHOTTKY DIOD - Tape and Reel |
| MBR835 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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