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参数资料
| 型号： | MBR870L |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8 A, 70 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 78K |
| 代理商： | MBR870L |
MBR870L thru 8100L
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
8
230
-55 to +150
0.55
7
280
10000
0.72
0.58
MBR870L
70
49
70
MBR880L
80
56
80
MBR890L
90
63
90
MBR8100L
100
70
100
TO-220AC
All Dimensions in millimeter
TO-220AC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
5.33
N
M
L
K
J
I
1.14
4.83
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2
CASE
PIN
1
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 8.0 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
VRMS
VDC
VRRM
I(AV)
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
TJ
Operating Temperature Range
C
TSTG
Storage Temperature Range
C
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Typical Thermal Resistance (Note 3)
C/W
R0JC
Voltage Rate of Change (Rated VR)
dv/dt
V/us
VF
Maximum Forward
Voltage (Note 1)
V
TJ =25 C
TJ =125 C
IF =8A @
Maximum Average Forward Rectified
Current at TC=125 C (See Fig.1)
Typical Junction Capacitance (Note 2)
CJ
pF
-55 to +175
2.0
SEMICONDUCTOR
LITE-ON
REV. 5, Oct-2010, KTHA06
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