参数资料
型号: MBRB1090-E3/4W
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 2/5页
文件大小: 135K
代理商: MBRB1090-E3/4W
New Product
MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89034
Revision: 24-Jun-09
2
Notes
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage (1)
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
VF
0.80
0.65
0.75
V
Maximum reverse current at working peak
reverse voltage (2)
TJ = 25 °C
TJ = 100 °C
IR
100
6.0
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance
RθJA
RθJC
60
2.0
-
3.5
60
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
MBR10100-E3/4W
1.845
4W
50/tube
Tube
ITO-220AC
MBRF10100-E3/4W
1.661
4W
50/tube
Tube
TO-263AB
MBRB10100-E3/4W
1.384
4W
50/tube
Tube
TO-263AB
MBRB10100-E3/8W
1.384
8W
800/reel
Tape and reel
Figure 1. Forward Current Derating Curve
0
2
4
6
10
0
50
100
150
8
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
40
60
100
80
140
120
160
1
100
10
T
J = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
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